The inset in (e) shows the corresponding selected area diffraction pattern with a zone axis of [1–30]. The second processing parameter we investigated was the vapor pressure. Figure 3a,b,c show our SEM studies for 100, 300, and 500 Torr, respectively. It turns out that

CoSi nanowires grew particularly well at the reaction pressure of 500 Torr. In this experiment, the higher the vapor pressure, the longer the nanowires grown. Additionally, with the increasing vapor pressure, the number of nanoparticles reduces, Vorinostat manufacturer but the size of the nanoparticles increases. Serine/CaMK inhibitor Figure 3 SEM images of CoSi nanowires. At vapor pressures Z-DEVD-FMK of (a) 100, (b) 300, and (c) 500 Torr, respectively. For the synthesis of cobalt silicide nanowires, the third and final processing parameter we studied was the gas flow rate. We conducted experiments

at the gas flow rate of 200, 250, 300, and 350 sccm, obtaining the corresponding results shown in Figure 4a,b,c,d, respectively. It can be found in the SEM images of Figure 4 that at 850°C ~ 880°C, the number of CoSi nanowires reduced with the increasing gas flow rate; thus, more CoSi nanowires appeared as the gas flow rate was lower. Figure 4 SEM images of CoSi nanowires. At gas flow rates of (a) 200, (b) 250, (c) 300, and (d) 350 sccm, respectively. The growth mechanism of the cobalt silicide nanowires in this work is of interest. Figure 5

is the schematic illustration of the growth mechanism, showing the proposed growth steps of CoSi nanowires with a SiOx outer layer. When the system temperature did not reach the reaction temperature, CoCl2 reacted with H2 (g) to form Co following step (1) of Figure 5: Figure 5 The schematic illustration of the growth mechanism. (1) CoCl2(g) + H2(g) → Co(s) + 2HCl(g), (2) 2CoCl2(g) + 3Si(s) → 2CoSi(s) + SiCl4(g), (3) SiCl4(g) + 2H2(g) → Si(g) + 4HCl(g), (4) 2Si(g) + O2(g) → 2SiO(g), and (5) Co(solid or vapor) + 2SiO(g) → CoSi(s) + SiO2(s). The Co atoms agglomerated to Oxymatrine form Co nanoparticles on the silicon substrate. When the system temperature reached the reaction temperatures, 850°C ~ 880°C, CoCl2 reacted with the silicon substrate to form a CoSi thin film and SiCl4 based on step (2) of Figure 5: The SiCl4 product then reacted with H2(g) to form Si(g) following step (3) of Figure 5: The Si here reacted with either residual oxygen or the exposed SiO2 surface to form SiO vapor from step (4) of Figure 5[30]: The SiO vapor reacted with Co nanoparticles via vapor-liquid–solid mechanism.