EDXS analysis of the samples evidently reveals nitrogen and tantalum peaks, verifying the formation of tantalum nitride, Figure 4a. Meanwhile, the concentration of oxygen is lower than the detection limit (few wt.%), excluding the

click here unintentional formation of tantalum oxide or oxynitride phases, Figure 4a. Furthermore, in Figure 4b, the broad bands of the Raman spectra from 60 to 140 cm-1 and from 590 to 720 cm-1 suggest that TaN x film is formed on Si substrate and it is amorphous in nature, while the Raman shift around 250 cm-1, not reported in the literature for the TaN x films with x < 1.37 [40, 41], indicates that a N-rich phase might be present. For the films deposited on Au, it was impossible to detect Raman spectra due to the strong luminescence from the Au substrate. However in this case, the amorphous phase is confirmed visually as the samples have the characteristic distinctive yellow-brown color of the amorphous tantalum nitride [42]. The correlation between color and composition in TaN x is well known, as highly conductive tantalum nitrides (x ≤ 1) have been reported to be gray, whereas semiconducting crystalline Ta3N5 (x ≈ 1.66) is red and semiconducting

amorphous TaN x is yellow-brown selleck chemical [28]. Figure 3 FIB and TEM images of the TaN x film deposited on Si. (a) Cross section of the TaN x film deposited however on Si obtained with FIB technique. (b) TEM image of amorphous and chain-like structures. (c) HRTEM image of 5-nm nanoparticles forming the chain-like structure. (d) Selected-area electron diffraction (SAED) pattern, where beside the diffused broad band characteristic for amorphous material, faint spots are present which could be indexed as cubic Fm-3m tantalum. Figure 4 EDXS and micro-Raman spectrum of TaN x deposited on Si. (a) EDXS

spectrum. The presence of nitrogen verifies the formation of a-TaN, and the concentration of oxygen is lower than the detection limit (few wt. %). (b) Raman spectrum of TaN x on Si. The broad peaks indicate the amorphous character of the film. By fixing the tip on individual nanodomains of a-TaN x films deposited on Au or Si, the local I-V characteristics are repeatedly recorded with the voltage being swept from -10 to 10 V. In Figure 5, the I-V Fedratinib curves for forward and reverse bias voltages at several local points are shown for TaN x deposited on Au (Figure 5a,b) and Si (Figure 5c,d). At first glance, comparing the I-Vs of the nanodomains, which are located on the same film, small or large differences in conductivity and threshold voltage are observed for both films. However, the shape of the I-Vs is quite similar, indicating that the conduction mechanism is the same for all nanodomains located on the same film.